Title :
20.8 Gb/s GaAs LSI self-routing switch for ATM switching systems
Author :
Yamada, Hiroyuki ; Tsunotani, Masanori ; Kaneyama, Fumiyasu ; Seki, Shouhei
Author_Institution :
Oki Electr. Ind. Co. Ltd., Tokyo, Japan
fDate :
1/1/1997 12:00:00 AM
Abstract :
An 8×8 self-routing hardware switch providing 20.8 Gb/s throughput has been developed for asynchronous transfer mode (ATM) switching systems. The basic architecture of this switch is a Batcher-Banyan network. A new mechanism for data processing and distributing high-speed signals is proposed. This switching system consists of three LSIs using a 0.5-μm gate GaAs MESFET technology. These LSIs are a switching network LSI for exchanging packet cells with eight cell channels, a negotiation network for screening of cells destined for the same output port, and a demultiplexer LSI for converting the cell streams from the switching network LSI to the eight streams per channel. These LSIs are mounted in a 520-pin multichip module package. The total number of logic gates is 13.3 k, and the power dissipation is 24 W. The switching system fully operates at a data rate of 2.6 Gb/s, and its throughput is 20.8 Gb/s
Keywords :
III-V semiconductors; MESFET integrated circuits; asynchronous transfer mode; demultiplexing equipment; digital communication; electronic switching systems; gallium arsenide; large scale integration; packet switching; 0.5 micron; 20.8 Gbit/s; 24 W; ATM switching systems; Batcher-Banyan network; GaAs; LSI self-routing switch; MESFET technology; asynchronous transfer mode; cell streams; demultiplexer LSI; logic gates; multichip module; negotiation network; packet cells; power dissipation; switching network LSI; throughput; Asynchronous transfer mode; Data processing; Gallium arsenide; Hardware; Large scale integration; Packet switching; Signal processing; Switches; Switching systems; Throughput;
Journal_Title :
Solid-State Circuits, IEEE Journal of
