Extraction of a nonlinear AC FET model using small-signal S-parameters

Author

Vuolevi, Joel H K ; Rahkonen, Timo

Author_Institution

Dept. of Electr. Eng., Oulu Univ., Finland

Volume

50

Issue

5

fYear

2002

fDate

5/1/2002 12:00:00 AM

Firstpage

1311

Lastpage

1315

Abstract

The nonlinearities of an RF FET can be obtained by a set of small-signal circuit elements extracted over a range of terminal voltages and temperatures. This study used pulsed S-parameter measurements on a 3 × 3 DC-bias-point grid at two different temperatures to obtain electrical and electrothermal nonlinearity coefficients up to the third order. The extracted nonlinear AC model can be used in a Volterra analysis to gain an insight into the distortion mechanisms. The measurement results were in good agreement with the calculated third-order intermodulation values

Keywords

S-parameters; UHF field effect transistors; Volterra series; electric distortion; equivalent circuits; intermodulation; microwave field effect transistors; semiconductor device measurement; semiconductor device models; 1.8 GHz; 10 GHz; DC-bias-point grid; RF FET nonlinearities; Volterra analysis; distortion mechanisms; electrical nonlinearity coefficients; electrothermal nonlinearity coefficients; extracted nonlinear AC model; model extraction; nonlinear AC FET model; nonlinear characterization; pulsed S-parameter measurements; self-heating; small-signal S-parameters; small-signal circuit elements; third-order intermodulation values; Circuits; Distortion measurement; Electric variables measurement; Electrothermal effects; FETs; Pulse measurements; Radio frequency; Scattering parameters; Temperature distribution; Voltage;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.999144

Filename

999144