Recent progress in group-III nitride light-emitting diodes

Author

Mukai, Takashi

Author_Institution

Nitride Semicond. Res. Lab., Nichia Corp., Tokushima, Japan

Volume

8

Issue

2

fYear

2002

Firstpage

264

Lastpage

270

Abstract

We review the recent progress of nitride-based light-emitting diodes (LEDs) and discuss the dislocation issue and luminous efficiency. First, candela-class blue LEDs have been developed. InGaN layer was used for nitride LEDs instead of GaN active layer. The quantum-well-structure InGaN active layer dramatically improved the external quantum efficiency. There are a number of threading dislocations in epitaxial layer of nitride-based LEDs. InGaN-LEDs, however, have quite high external quantum efficiency. With regard to this, it is thought that the fluctuation of indium mole fraction is strongly related to the high external quantum efficiency. We also discuss the method to improve the external quantum efficiency of nitride-based LEDs

Keywords

III-V semiconductors; dislocations; fluctuations; gallium compounds; indium compounds; light emitting diodes; semiconductor quantum wells; zinc; InGaN active layer; InGaN layer; InGaN-LEDs; InGaN:Zn; LEDs; active layer; candela-class blue LEDs; epitaxial layer; external quantum efficiency; fluctuation; group-III nitride light-emitting diodes; high external quantum efficiency; indium mole fraction; location issue; luminous efficiency; nitride-based LEDs; nitride-based light-emitting diodes; quantum-well-structure; threading dislocations; Crystallization; Epitaxial layers; Gallium nitride; Indium; Lattices; Light emitting diodes; MOCVD; Quantum wells; Substrates; Temperature;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/2944.999179

Filename

999179