High-efficiency InGaN-GaN MQW green light-emitting diodes with CART and DBR structures

Author

Chen, C.H. ; Chang, S.J. ; Su, Y.K. ; Chi, G.C. ; Sheu, J.K. ; Chen, J.F.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

8

Issue

2

fYear

2002

Firstpage

284

Lastpage

288

Abstract

Distributed Bragg reflector (DBR) and charge asymmetric resonance tunneling (CART) structures were applied to nitride-based green light-emitting diodes (LEDs) to enhance their output efficiency It was found that we can reduce the forward voltage at 20 mA from 3.7 to 3.2 V with the inclusion of CART structure. It was also found that the electroluminescence peak wavelength of the CART LED is less sensitive to the amount of injection current. The output power and external quantum efficiency of the CART LED with DBR structure measured at 20 mA can reach 7.2 mW and 11.25%, respectively

Keywords

III-V semiconductors; electroluminescence; gallium compounds; indium compounds; light emitting diodes; resonant tunnelling; semiconductor quantum wells; 11.25 percent; 20 mA; 3.7 to 3.2 V; 7.2 mW; CART LED; CART structures; DBR structure; DBR structures; InGaN-GaN; InGaN-GaN MQW green light-emitting diodes; LEDs; charge asymmetric resonance tunneling structures; distributed Bragg reflector structures; electroluminescence peak wavelength; external quantum efficiency; forward voltage; injection current; nitride-based green light-emitting diodes; output efficiency; output power; Distributed Bragg reflectors; Electroluminescence; Light emitting diodes; Power generation; Power measurement; Quantum well devices; Resonance; Tunneling; Voltage; Wavelength measurement;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/2944.999182

Filename

999182