Title :
Advances in AlGaInN blue and ultraviolet light emitters
Author :
Han, J. ; Nurmikko, A.V.
Author_Institution :
Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
Abstract :
In this paper, we discuss the current status and the considerable challenges for extending the nitride light sources into deeper ultraviolet (UV). We also review recent progress in exploratory blue and near UV III-nitride light emitters, such as vertical cavity devices and dual-wavelength light-emitting diodes, which may provide useful device templates for applications in the deeper UV
Keywords :
III-V semiconductors; X-ray optics; aluminium compounds; electroluminescence; gallium compounds; indium compounds; light emitting diodes; optical resonators; semiconductor quantum wells; AlGaInN; AlGaInN light emitters; MQW LEDs; UV III-nitride light emitters; blue light emitters; deeper UV; deeper ultraviolet; device templates; dual-wavelength light-emitting diodes; electroluminescence spectrum; nitride light sources; ultraviolet light emitters; vertical cavity devices; Biomedical optical imaging; DH-HEMTs; Fluorescence; Laser excitation; Light emitting diodes; Light sources; Optical recording; Optical scattering; Optical sensors; Quantum well devices;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.999183
