DocumentCode
1280224
Title
Advances in AlGaInN blue and ultraviolet light emitters
Author
Han, J. ; Nurmikko, A.V.
Author_Institution
Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
Volume
8
Issue
2
fYear
2002
Firstpage
289
Lastpage
297
Abstract
In this paper, we discuss the current status and the considerable challenges for extending the nitride light sources into deeper ultraviolet (UV). We also review recent progress in exploratory blue and near UV III-nitride light emitters, such as vertical cavity devices and dual-wavelength light-emitting diodes, which may provide useful device templates for applications in the deeper UV
Keywords
III-V semiconductors; X-ray optics; aluminium compounds; electroluminescence; gallium compounds; indium compounds; light emitting diodes; optical resonators; semiconductor quantum wells; AlGaInN; AlGaInN light emitters; MQW LEDs; UV III-nitride light emitters; blue light emitters; deeper UV; deeper ultraviolet; device templates; dual-wavelength light-emitting diodes; electroluminescence spectrum; nitride light sources; ultraviolet light emitters; vertical cavity devices; Biomedical optical imaging; DH-HEMTs; Fluorescence; Laser excitation; Light emitting diodes; Light sources; Optical recording; Optical scattering; Optical sensors; Quantum well devices;
fLanguage
English
Journal_Title
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
1077-260X
Type
jour
DOI
10.1109/2944.999183
Filename
999183
Link To Document