Title :
Deep ultraviolet light-emitting diodes using quaternary AlInGaN multiple quantum wells
Author :
Shatalov, M. ; Zhang, J. ; Chitnis, A.S. ; Adivarahan, V. ; Yang, J. ; Simin, G. ; Khan, M. Asif
Author_Institution :
Dept. of Electr. Eng., South Carolina Univ., Columbia, SC, USA
Abstract :
We report on the growth, fabrication, and characterization of deep ultraviolet (UV) light-emitting diodes (LEDs) with quaternary AlInGaN-AlInGaN multiple quantum wells (MQWs) in the active region. These high quality quaternary MQWs were deposited over sapphire and n-SiC substrates using a novel pulsed atomic layer epitaxy (PALE) technique. LEDs with peak emission wavelengths from 305-340 nm were fabricated and characterized. Using square geometry devices over sapphire and n-SiC substrates we studied the role of current crowding. Numerical simulation results are also provided to explain the observed current-voltage and light-emission characteristics
Keywords :
III-V semiconductors; aluminium compounds; electroluminescence; epitaxial growth; gallium compounds; geometry; indium compounds; light emitting diodes; optical fabrication; photoluminescence; pulsed laser deposition; semiconductor quantum wells; 305 to 340 nm; AlInGaN-AlInGaN; LEDs; active region; current crowding; current-voltage characteristics; deep ultraviolet light-emitting diodes; fabrication; growth; high quality quaternary MQWs; light-emission characteristics; numerical simulation; peak emission wavelengths; pulsed atomic layer epitaxy technique; quaternary AlInGaN multiple quantum wells; sapphire; square geometry devices; Aluminum gallium nitride; Atomic layer deposition; Epitaxial growth; Lattices; Light emitting diodes; Optical scattering; Pump lasers; Quantum well devices; Substrates; Temperature;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.999185
