DocumentCode :
1280239
Title :
Laser parameter extraction for tunable vertical cavity lasers
Author :
Lin, Chien-chung ; Sugihwo, F. ; Harris, J.S.
Author_Institution :
Solid State Electron. Lab., Stanford Univ., CA, USA
Volume :
33
Issue :
20
fYear :
1997
fDate :
9/25/1997 12:00:00 AM
Firstpage :
1705
Lastpage :
1707
Abstract :
A novel technique for extraction of diode laser parameters is demonstrated. With tunable vertical cavity surface emitting lasers (VCSELs), the internal quantum efficiency, internal loss, average gain coefficient, and transparent current density can be extracted on the same device. This technique enables evaluation of critical elements and design of VCSEL structures
Keywords :
laser tuning; laser variables measurement; semiconductor lasers; surface emitting lasers; diode laser; gain coefficient; internal loss; internal quantum efficiency; parameter extraction; transparent current density; tunable vertical cavity surface emitting laser;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19971150
Filename :
629544
Link To Document :
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