Title :
Low-threshold GaInP/AlGaInP ridge waveguide lasers
Author :
Kuhn, J. ; Geng, C. ; Scholz, F. ; Schweizer, H.
Author_Institution :
4. Phys. Inst., Stuttgart Univ., Germany
fDate :
9/25/1997 12:00:00 AM
Abstract :
The authors have fabricated low-threshold 670 nm GaInP/AlGaInP ridge waveguide lasers based on a combined dry- and wet-etching technique. Minimum CW threshold currents of 10.4 mA with a differential quantum efficiency of 72% have been obtained for a 2 μm wide and 200 μm long triple quantum well laser. A maximum output power of 23 mW per facet is achieved for this uncoated device. Single transverse mode operation is observed for output powers of up to 14 mW per facet
Keywords :
III-V semiconductors; aluminium compounds; etching; gallium compounds; indium compounds; laser modes; laser transitions; optical fabrication; quantum well lasers; ridge waveguides; waveguide lasers; 10.4 mA; 14 mW; 2 micron; 200 micron; 23 mW; 670 nm; 72 percent; GaInP-AlGaInP; combined etching technique; dry etching; low-threshold lasers; ridge waveguide lasers; semiconductor laser; single transverse mode operation; triple quantum well laser; wet etching;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19971165
