Title :
High brightness AlGaInP light-emitting diodes
Author :
Streubel, Klaus ; Linder, Norbert ; Wirth, Ralph ; Jaeger, Arndt
Author_Institution :
Osram Opto Semicond., Regensburg, Germany
Abstract :
This paper reviews the recent progress of AlGaInP high brightness light-emitting diodes. After the discussion of some basic material properties and the general problem of light extraction we will discuss several approaches of high efficiency devices
Keywords :
III-V semiconductors; aluminium compounds; brightness; gallium compounds; indium compounds; light emitting diodes; AlGaInP; AlGaInP LEDs; AlGaInP light-emitting diodes; basic material properties; high brightness; high brightness light-emitting diodes; high efficiency devices; light extraction; reviews; Acceleration; Aluminum alloys; Brightness; Epitaxial growth; Epitaxial layers; Gallium alloys; Light emitting diodes; Material properties; Semiconductor materials; Substrates;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.999187
