DocumentCode :
1280267
Title :
High-power phosphor-converted light-emitting diodes based on III-Nitrides
Author :
Mueller-Mach, Regina ; Mueller, Gerd O. ; Krames, Michael R. ; Trottier, Troy
Author_Institution :
Adv. Labs., Lumileds Lighting, San Jose, CA, USA
Volume :
8
Issue :
2
fYear :
2002
Firstpage :
339
Lastpage :
345
Abstract :
Phosphor conversion of light-emitting diode light for white light sources and some monochrome applications requires particular phosphor properties and has to take into account specific issues if aimed at high-power output. Limitations and solutions will be discussed, giving special considerations to drive and temperature dependencies. Efficiencies of 32 lm/W for white with good color rendering at 4600 K and 35 lm/W for green (535 nm) have been demonstrated
Keywords :
III-V semiconductors; colour; light emitting diodes; light sources; phosphors; wide band gap semiconductors; 4600 K; 535 nm; III-V nitrides; color rendering; drive dependence; high-power phosphor-converted light-emitting diodes; monochrome applications; phosphor conversion; solid-state illumination; solid-state lighting; temperature dependence; white light sources; Brightness; Drives; Legged locomotion; Light emitting diodes; Light sources; Luminescence; Phosphors; Solid state lighting; Temperature dependence; Wavelength conversion;
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/2944.999189
Filename :
999189
Link To Document :
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