Title :
Degradation in thin-film SOI MOSFET´s caused by single-transistor latch
Author :
Bunyan, R.J.T. ; Uren, M.J. ; Thomas, N.J. ; Davis, J.R.
Author_Institution :
R. Signals & Radar Establ., Great Malvern, UK
Abstract :
The measurement of anomalous hot-carrier damage in thin-film n-channel SOI MOSFETs is reported. Due to the presence of a parasitic bipolar transistor between the source and drain, the minimum drain voltage for breakdown in these devices occurs when the device is biased in subthreshold. Using charge-pumping measurements, it is shown that if the device is biased in this regime, where single-transistor latch occurs, hot holes are injected into the gate oxide near the drain. Consequently, the maximum allowable drain voltage for these devices is governed by the parasitic bipolar properties of the SOI MOSFET.<>
Keywords :
hot carriers; insulated gate field effect transistors; semiconductor-insulator boundaries; anomalous hot-carrier damage; charge-pumping measurements; degradation; gate oxide; hot holes; maximum allowable drain voltage; measurement; minimum drain voltage; parasitic bipolar transistor; single-transistor latch; subthreshold bias; thin-film n-channel SOI MOSFETs; Bipolar transistors; Breakdown voltage; Charge pumps; Current measurement; Degradation; Hot carrier injection; Hot carriers; MOSFET circuits; Silicon; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
