• DocumentCode
    1280332
  • Title

    Self-aligned porous silicon optical waveguides

  • Author

    Arrand, H.F. ; Benson, T.M. ; Loni, A. ; Krueger, M.G. ; Thoenissen, M. ; Lueth, H.

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Nottingham Univ., UK
  • Volume
    33
  • Issue
    20
  • fYear
    1997
  • fDate
    9/25/1997 12:00:00 AM
  • Firstpage
    1724
  • Lastpage
    1725
  • Abstract
    The authors report a new self-aligned method for the fabrication of porous silicon optical waveguides which is simple and avoids the typical processing problems associated with the chemically-reactive nature of the porous silicon internal surface. The method is compatible with high temperature oxidation, enabling waveguides operating between visible (633 nm) and infra-red (1.3 μm) to be fabricated
  • Keywords
    elemental semiconductors; optical fabrication; optical waveguides; oxidation; porous materials; silicon; 633 nm to 1.3 mum; Si; high temperature oxidation; optical waveguide fabrication; optical waveguides; porous materials; self-aligned method;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19971144
  • Filename
    629558
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1280332