Title :
Photoluminescence from SiGe/Si quantum dots with wavelength in the visible range
Author :
Huang, F.Y. ; Tang, Y.S. ; Duan, J.N. ; Wang, K.L.
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
fDate :
9/25/1997 12:00:00 AM
Abstract :
Photoluminescence from Si0.7Ge0.3/Si quantum dots with wavelength in the visible range is reported. The SiGe/Si quantum dots were fabricated by electron beam lithography and reactive ion etching of an SiGe/Si superlattice. A photoluminescence spectrum was obtained between 4.2 K and room temperature. As the temperature increased, the photoluminescence intensity decreased, with the peak position shifting slightly to a higher energy. The photoluminescence persisted up to room temperature with its intensity ~40% of that at 4.2 K
Keywords :
Ge-Si alloys; electron beam lithography; elemental semiconductors; photoluminescence; semiconductor epitaxial layers; semiconductor materials; semiconductor quantum dots; silicon; sputter etching; 4.2 to 293 K; SiGe-Si; electron beam lithography; luminescence intensity; photoluminescence; quantum dots; reactive ion etching;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19971171
