On designing sub-70-nm semiconductor materials and processes

Author

Zhirnov, Victor V. ; Cavin, R.K. ; Herr, D.J.C. ; Wooldridge, T.A.

Author_Institution

Semicond. Res. Corp., Durham, NC, USA

Volume

15

Issue

2

fYear

2002

fDate

5/1/2002 12:00:00 AM

Firstpage

157

Lastpage

168

Abstract

In this paper, the authors examine salient materials and processing technologies that we believe are necessary to sustain the continued cadence of mainstream silicon technology. Specifically, they discuss the need for technologies that yield atomically smooth interfaces and suggest that perhaps molecular beam epitaxy has reached the point where it can transition into mainstream silicon manufacturing. Patterning candidates for next generation lithography are discussed and the possible role of maskless patterning technologies is considered. The role of doping on the performance of projected future generation devices is discussed and the tradeoffs involved in the precise control of the number and location of dopants for devices in the far nanometer regime are considered. ESH issues and possible remedies for future generation processes are also briefly discussed

Keywords

integrated circuit manufacture; integrated circuit technology; lithography; molecular beam epitaxial growth; nanostructured materials; nanotechnology; semiconductor doping; semiconductor growth; 70 nm; MBE; Si; Si technology; deterministic doping; maskless patterning technologies; molecular beam epltaxy; nanometer regime; next generation lithography; patterning candidates; processing technologies; Atomic beams; Atomic layer deposition; CMOS technology; Dielectric materials; Fabrication; Lithography; Nanoscale devices; Optical sensors; Semiconductor materials; Silicon;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/66.999587

Filename

999587