DocumentCode :
1280608
Title :
Thermal-stability and compressive properties of one boron nitride nanotube embedded in another carbon tube
Author :
Shen Haijun
Author_Institution :
Sch. of Aeronaut. & Astronaut., Tongji Univ., Shanghai, China
Volume :
6
Issue :
6
fYear :
2011
fDate :
6/1/2011 12:00:00 AM
Firstpage :
444
Lastpage :
447
Abstract :
The melting and axial compression of one (5, 5) single-walled boron nitride (BN) nanotube, as well as the (5, 5) BN tube embedded in one (10, 10) carbon nanotube, were simulated by molecular dynamics method. According to the calculated results, their differences in thermal-stability and compressive properties were discussed. It is shown that (i) the single-walled BN nanotube melts at about 4600 K, and the BN tube restricted in the carbon tube basically holds its configuration even at the high temperature of 5000 K; (ii) the restricted BN tube has much better anti-compression capability than the single-walled BN nanotube.
Keywords :
III-V semiconductors; boron compounds; carbon nanotubes; compressive strength; melting; molecular dynamics method; thermal stability; wide band gap semiconductors; BN; C-BN; anticompression capability; axial compression; carbon nanotube; compressive properties; melting; molecular dynamics method; single-walled boron nitride nanotube; thermal stability;
fLanguage :
English
Journal_Title :
Micro & Nano Letters, IET
Publisher :
iet
ISSN :
1750-0443
Type :
jour
DOI :
10.1049/mnl.2011.0180
Filename :
5960469
Link To Document :
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