Synthesis of p-type ZnSe nanowires by atmosphere compensating technique

Author

Shanying Li ; Yang Jiang ; Binbin Wang ; Di Wu ; Junwei Li ; Yugang Zhang ; Ben Yang ; Xianan Ding ; Hongyang Zhou ; Honghai Zhong

Author_Institution

Sch. of Mater. Sci. & Eng., Hefei Univ. of Technol., Hefei, China

Volume

6

Issue

6

fYear

2011

fDate

6/1/2011 12:00:00 AM

Firstpage

459

Lastpage

462

Abstract

The atmosphere compensating technique with an individual selenium source is, first, used in the growth of phosphorus-doped p-type ZnSe nanowires. The morphology and structure characterisations reveal that the as-synthesised ZnSe nanowires have a wurtzite structure with a diameter of about 160 nm, a growth direction of [001]. The electrical properties characterisations demonstrate that the selenium atmosphere compensation technique assisted with phosphorus-doping leads to a substantial action in p-type conductivity of ZnSe nanowires with a high mobility of 1.25 cm² V^-1 S^-1 and carrier concentration of 1.47×10¹⁸ cm^-3. The photoluminescence measurements show a dominant emission and two donor-acceptor pair emission.

Keywords

II-VI semiconductors; carrier density; carrier mobility; electrical conductivity; nanofabrication; nanowires; phosphorus; photoluminescence; semiconductor doping; semiconductor quantum wires; zinc compounds; ZnSe:P; atmosphere compensating technique; carrier concentration; carrier mobility; donor-acceptor pair emission; electrical properties; nanowire morphology; nanowire structure; p-type ZnSe nanowire synthesis; p-type conductivity; phosphorus doped p-type ZnSe nanowires; photoluminescence measurements; selenium atmosphere compensation technique; selenium source; wurtzite structure;

fLanguage

English

Journal_Title

Micro & Nano Letters, IET

Publisher

iet

ISSN

1750-0443

Type

jour

DOI

10.1049/mnl.2011.0219

Filename

5960473