Title :
Short-channel Al0.5Ga0.5N-GaN MODFETs with power density >3 W/mm at 18 GHz
Author :
Wu, Y.F. ; Keller, B.P. ; Fini, P. ; Pusl, J. ; Le, M. ; Nguyen, N.X. ; Nguyen, C. ; Widman, D. ; Keller, S. ; DenBaars, S.P. ; Mishra, U.K.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fDate :
9/25/1997 12:00:00 AM
Abstract :
The authors have demonstrated 0.25 μm gate-length Al0.5 Ga0.5N/GaN MODFETs on sapphire substrates which exhibit CW output power densities >3 W/mm at 18 GHz, the highest reported to date for microwave FETs in the K band. This confirms the promise of the high Al-content AlGaN/GaN MODFET structure
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; microwave field effect transistors; microwave power transistors; power HEMT; 0.25 micron; 18 GHz; Al0.5Ga0.5N-GaN; CW output power densities; K band; microwave FETs; short-channel MODFETs;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19971127
