GaN-Based LEDs With Air Voids Prepared by One-Step MOCVD Growth

Author

Lin, N.M. ; Chang, S.J. ; Shei, S.C. ; Lai, W.C. ; Yang, Y.Y. ; Lin, W.C. ; Lo, H.M.

Author_Institution

Inst. of Nanotechnol. & Microsyst. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

29

Issue

18

fYear

2011

Firstpage

2831

Lastpage

2835

Abstract

The authors report the formation of air voids at GaN/cone-shaped pattern sapphire substrate interface by laser scribing and lateral etching with one-step growth. With 5 and 20 min lateral etching, it was found that pyramid-like air voids were formed with an average height of 0.98 and 1.9 μm, respectively, on top of each cone of the substrate. It was also found that we can enhance LED output power by 11.5% by etching the wafers for 20 min. It was also found that the simulated results agree well with the experimentally observed data.

Keywords

III-V semiconductors; MOCVD; gallium compounds; light emitting diodes; sapphire; voids (solid); wide band gap semiconductors; Al₂O₃; GaN; GaN-based LED; cone-shaped pattern; laser scribing; lateral etching; one-step MOCVD growth; pyramid-like air voids; sapphire substrate interface; time 20 min; time 5 min; Atmospheric modeling; Electrical engineering; Etching; Gallium nitride; Light emitting diodes; Power generation; Substrates; Air voids; GaN; TracePro; laser scribing; lateral etching; light-emitting diodes (LEDs);

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/JLT.2011.2162821

Filename

5960753