Title :
10-Gb/s Ge/SiGe Multiple Quantum-Well Waveguide Photodetector
Author :
Chaisakul, Papichaya ; Marris-Morini, D. ; Isella, Giovanni ; Chrastina, D. ; Rouifed, M.-S. ; Le Roux, X. ; Edmond, Samson ; Cassan, Eric ; Coudevylle, Jean-Rene ; Vivien, L.
Author_Institution :
CNRS, Univ. Paris-Sud, Orsay, France
Abstract :
The authors report on high speed operation of a Ge/SiGe multiple quantum-well waveguide photodetector. At -3 V, 10 Gb/s operation is demonstrated at wavelengths of 1405 and 1420 nm with a responsivity as high as 0.8 A/W. The device, 3 μm wide and 80 μm long, exhibits a dark current of 474 nA at a reverse bias of -1 V. These results pave the way for the use of Ge/SiGe multiple quantum-well structures as efficient active waveguide devices in silicon compatible integrated circuits.
Keywords :
Ge-Si alloys; elemental semiconductors; germanium; optical waveguides; photodetectors; quantum well devices; Ge-SiGe; active waveguide; bit rate 10 Gbit/s; current 474 nA; dark current; device responsivity; multiple quantum-well waveguide photodetector; silicon compatible integrated circuits; size 3 mum; size 80 mum; voltage -3 V; wavelength 1405 nm; wavelength 1420 nm; Optical modulation; Optical waveguides; Photodetectors; Quantum well devices; Silicon; Silicon germanium; Ge/SiGe; integrated optoelectronics; multiple quantum wells; silicon photonics;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2011.2162724
