Title :
Nonlinear variance model for analysis of effects of process-parameter fluctuations
Author :
Rowlands, D. ; Dimitrijev, S.
Author_Institution :
Sch. of Microelectron. Eng., Griffith Univ., Brisbane, Qld., Australia
fDate :
10/14/1999 12:00:00 AM
Abstract :
A nonlinear variance equation has been derived and applied to the threshold voltage of a 0.1 μm SOI MOS device. The equation enabled an analysis of the effects of process-parameter fluctuations to be made. The analysis showed that the effect of the nonlinear terms (15.48%) is more important than the effect of the mixed term (0.02%), and almost as important as the contribution of the second most dominant input-process parameter (21.98%). This illustrates the importance of the proposed nonlinear equation
Keywords :
MOSFET; fluctuations; nonlinear equations; semiconductor device models; silicon-on-insulator; 0.1 micron; SOI MOS device; Si; nonlinear equation; nonlinear variance model; process-parameter fluctuations; threshold voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19991259
