DocumentCode
1281112
Title
Nonlinear variance model for analysis of effects of process-parameter fluctuations
Author
Rowlands, D. ; Dimitrijev, S.
Author_Institution
Sch. of Microelectron. Eng., Griffith Univ., Brisbane, Qld., Australia
Volume
35
Issue
21
fYear
1999
fDate
10/14/1999 12:00:00 AM
Firstpage
1836
Lastpage
1837
Abstract
A nonlinear variance equation has been derived and applied to the threshold voltage of a 0.1 μm SOI MOS device. The equation enabled an analysis of the effects of process-parameter fluctuations to be made. The analysis showed that the effect of the nonlinear terms (15.48%) is more important than the effect of the mixed term (0.02%), and almost as important as the contribution of the second most dominant input-process parameter (21.98%). This illustrates the importance of the proposed nonlinear equation
Keywords
MOSFET; fluctuations; nonlinear equations; semiconductor device models; silicon-on-insulator; 0.1 micron; SOI MOS device; Si; nonlinear equation; nonlinear variance model; process-parameter fluctuations; threshold voltage;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19991259
Filename
810003
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