• DocumentCode
    1281138
  • Title

    40 Gbit/s high voltage modulator driver in P-HEMT technology

  • Author

    Leich, M. ; Ludwig, M. ; Hulsmann, A. ; Hurm, V. ; Steinhagen, F. ; Thiede, A. ; Schlechtweg, M.

  • Author_Institution
    Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany
  • Volume
    35
  • Issue
    21
  • fYear
    1999
  • fDate
    10/14/1999 12:00:00 AM
  • Firstpage
    1842
  • Lastpage
    1844
  • Abstract
    A high speed modulator driver has been developed and realised using GaAs P-HEMT technology. The driver is realised as a distributed amplifier and gives an output signal with a voltage swing of >5 V at a data rate of 40 Gbit/s
  • Keywords
    HEMT circuits; III-V semiconductors; distributed amplifiers; driver circuits; gallium arsenide; optical fibre networks; optical modulation; time division multiplexing; 40 Gbit/s; GaAs; P-HEMT technology; TDM; data rate; distributed amplifier; high speed modulator driver; optical fibre networks; output signal; voltage swing;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19991226
  • Filename
    810007
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1281138