• DocumentCode
    1281144
  • Title

    High power continuous and quasi-continuous wave InGaAsP/InP broad-waveguide separate confinement-heterostructure multiquantum well diode lasers

  • Author

    Garbuzov, D.Z. ; Menna, R.J. ; Martinelli, R.U. ; Abeles, J.H. ; Connolly, J.C.

  • Author_Institution
    Sarnoff Corp., Princeton, NJ, USA
  • Volume
    33
  • Issue
    19
  • fYear
    1997
  • fDate
    9/11/1997 12:00:00 AM
  • Firstpage
    1635
  • Lastpage
    1636
  • Abstract
    The application of the broad-waveguide concept to InGaAsP/InP diode lasers has resulted in a fourfold reduction in internal loss to 1.3 cm-1 while achieving a record low threshold current of 73 A/ cm2 per quantum well. Output powers of 5.2 W continuous wave and 10 W quasi-continuous wave are demonstrated for 200 μm-aperture lasers emitting at 1.43 μm
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; quantum well lasers; waveguide lasers; 1.43 micron; 10 W; 5.2 W; InGaAsP-InP; broad waveguide; continuous wave operation; high power operation; internal loss; quasi-continuous wave operation; separate confinement-heterostructure multiquantum well diode laser; threshold current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19971099
  • Filename
    629604
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1281144