Title :
High power continuous and quasi-continuous wave InGaAsP/InP broad-waveguide separate confinement-heterostructure multiquantum well diode lasers
Author :
Garbuzov, D.Z. ; Menna, R.J. ; Martinelli, R.U. ; Abeles, J.H. ; Connolly, J.C.
Author_Institution :
Sarnoff Corp., Princeton, NJ, USA
fDate :
9/11/1997 12:00:00 AM
Abstract :
The application of the broad-waveguide concept to InGaAsP/InP diode lasers has resulted in a fourfold reduction in internal loss to 1.3 cm-1 while achieving a record low threshold current of 73 A/ cm2 per quantum well. Output powers of 5.2 W continuous wave and 10 W quasi-continuous wave are demonstrated for 200 μm-aperture lasers emitting at 1.43 μm
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; quantum well lasers; waveguide lasers; 1.43 micron; 10 W; 5.2 W; InGaAsP-InP; broad waveguide; continuous wave operation; high power operation; internal loss; quasi-continuous wave operation; separate confinement-heterostructure multiquantum well diode laser; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19971099
