DocumentCode
1281152
Title
3.9 W CW power from sub-monolayer quantum dot diode laser
Author
Zhukov, A.E. ; Kovsh, A.R. ; Mikhrin, S.S. ; Maleev, N.A. ; Ustinov, V.M. ; Livshits, D.A. ; Tarasov, I.S. ; Bedarev, D.A. ; Maximov, M.V. ; Tsatsul´nikov, A.F. ; Soshnikov, I.P. ; Kop´ev, P.S. ; Alferov, Zh.I. ; Ledentsov, N.N. ; Bimberg, D.
Author_Institution
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
Volume
35
Issue
21
fYear
1999
Firstpage
1845
Lastpage
1847
Abstract
Diode lasers emitting at 947 nm with sub-monolayer deposited InAs-GaAs quantum dots in the active region have been fabricated. The 3.9 W output power limited by catastrophic optical damage and the peak conversion efficiency of 50.5% were achieved at 10/spl deg/C in 100 /spl mu/m wide stripes with uncoated facets.
Keywords
indium compounds; 10 C; 100 micron; 3.9 W; 50.5 percent; 947 nm; CW power; InAs-GaAs; InAs/GaAs quantum dots; high power QD laser; quantum dot diode laser; sub-monolayer quantum dot LD; uncoated facets;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19991264
Filename
810010
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