Author :
Zhukov, A.E. ; Kovsh, A.R. ; Mikhrin, S.S. ; Maleev, N.A. ; Ustinov, V.M. ; Livshits, D.A. ; Tarasov, I.S. ; Bedarev, D.A. ; Maximov, M.V. ; Tsatsul´nikov, A.F. ; Soshnikov, I.P. ; Kop´ev, P.S. ; Alferov, Zh.I. ; Ledentsov, N.N. ; Bimberg, D.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
Abstract :
Diode lasers emitting at 947 nm with sub-monolayer deposited InAs-GaAs quantum dots in the active region have been fabricated. The 3.9 W output power limited by catastrophic optical damage and the peak conversion efficiency of 50.5% were achieved at 10/spl deg/C in 100 /spl mu/m wide stripes with uncoated facets.
