DocumentCode
1281166
Title
High peak power (1.1 W) (Al)GaAs quantum cascade laser emitting at 9.7 μm
Author
Page, H. ; Kruck, P. ; Barbieri, S. ; Sirtori, C. ; Stellmacher, M. ; Nagle, J.
Author_Institution
Lab. Central de Recherches, Thomson-CSF, Orsay, France
Volume
35
Issue
21
fYear
1999
fDate
10/14/1999 12:00:00 AM
Firstpage
1848
Lastpage
1849
Abstract
A unipolar quantum cascade laser operating at 9.7 μm and a temperature of 77 K based on the AlGaAs material system is reported. Collected peak output powers >1 W per facet are demonstrated, which it is believed have never been achieved before for quantum cascade lasers emitting at this wavelength. The maximum slope efficiency is 240 mW/A
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; laser transitions; quantum well lasers; (Al)GaAs quantum cascade laser; 1.1 W; 77 K; 9.7 micron; AlGaAs; high peak power operation; semiconductor laser; unipolar quantum cascade laser;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19991268
Filename
810013
Link To Document