• DocumentCode
    1281171
  • Title

    Study of high frequency response of self-organised stacked quantum dot lasers at room temperature

  • Author

    Mao, M.-H. ; Heinrichsdorff, F. ; Krost, A. ; Bimberg, D.

  • Author_Institution
    Inst. fur Festkorperphys., Tech. Univ. Berlin, Germany
  • Volume
    33
  • Issue
    19
  • fYear
    1997
  • fDate
    9/11/1997 12:00:00 AM
  • Firstpage
    1641
  • Lastpage
    1642
  • Abstract
    The high frequency response of self-organised stacked InAs/GaAs quantum dot lasers grown by MOCVD is investigated through relaxation oscillation measurements at room temperature. The highest relaxation oscillation frequency for a 265 μm cavity laser at room temperature is 5.3 GHz, corresponding to a 3 dB cutoff frequency of 8.2 GHz. Good static properties, such as high internal quantum efficiency (91%) and low transparency current density (40 A/cm2) at room temperature are also obtained
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; quantum well lasers; semiconductor quantum dots; 5.3 to 8.2 GHz; 91 percent; InAs-GaAs; MOCVD; cutoff frequency; high frequency response; internal quantum efficiency; relaxation oscillation frequency; room temperature; self-organised stacked quantum dot lasers; transparency current density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19971105
  • Filename
    629608
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1281171