Title :
A high voltage-gain GaAs vertical field-effect transistor with an InGaAs/GaAs planar-doped barrier launcher
Author :
Won, Yong H. ; Yamasaki, Kimiyoshi ; Daniels-Race, Theda ; Tasker, Paul J. ; Schaff, William J. ; Eastman, Lester F.
Author_Institution :
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
A high voltage-gain GaAs vertical field-effect transistor (VFET) with an InGaAs-GaAs pseudomorphic planar-doped barrier (PDB) launcher is described. The pseudomorphic structure, which includes a small amount of indium in the launcher, was grown by molecular beam epitaxy (MBE). Fabricated transistors, with good pinch-off characteristics (gate threshold voltage of -1.6 V), have exhibited DC open-drain voltage gains of up to 50 at 77 K. This high voltage gain results from the combination of high transconductances and low output conductances. The former are attributed to velocity enhancement by hot-electron injection, and the latter are attributed to the suppression of electron spillover by energy band discontinuity at the heterointerface between the launcher and the channel.<>
Keywords :
III-V semiconductors; field effect transistors; gallium arsenide; indium compounds; molecular beam epitaxial growth; -1.6 V; 77 K; DC open-drain voltage gains; GaAs; InGaAs-GaAs; MBE; ballistic launcher; energy band discontinuity; gate threshold voltage; heterointerface; high transconductances; high voltage-gain; hot-electron injection; low output conductances; molecular beam epitaxy; pinch-off characteristics; planar-doped barrier launcher; pseudomorphic planar-doped barrier; semiconductors; suppression of electron spillover; velocity enhancement; vertical field-effect transistor; Doping; FETs; Gallium arsenide; Indium gallium arsenide; Molecular beam epitaxial growth; Nanofabrication; Secondary generated hot electron injection; Substrates; Threshold voltage; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
