DocumentCode
1281245
Title
Observation of spectral hole burning in photocurrent spectrum of InAs self-assembled quantum dots embedded in PIN diode
Author
Sugiyama, Y. ; Nakata, Y. ; Muto, S. ; Horiguchi, N. ; Futatsugi, T. ; Awano, Y. ; Yokoyama, N.
Author_Institution
Fujitsu Labs. Ltd., Atsugi, Japan
Volume
33
Issue
19
fYear
1997
fDate
9/11/1997 12:00:00 AM
Firstpage
1655
Lastpage
1657
Abstract
The spectral hole burning of InAs self-assembled quantum dots (QDs) embedded in a PIN diode has been observed for the first time. The spectral hole depth increases as the electric field is increased. By numerical fitting to experimental results, the possibility of wavelength-domain multiplicity in optical memory by using InAs QDs is shown
Keywords
III-V semiconductors; indium compounds; optical hole burning; optical storage; p-i-n photodiodes; photoconductivity; semiconductor quantum dots; InAs; InAs self-assembled quantum dots; PIN diode; electric field; optical memory; photocurrent spectrum; spectral hole burning; spectral hole depth; wavelength-domain multiplicity;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19971096
Filename
629618
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