Title :
Accurate equivalent-network modelling of GaAs/AlAs based resonant tunnelling diodes with thin barrier layers
Author :
Kwaspen, J.J.M. ; Lepsa, M.I. ; van de Roer, Th G ; van der Vleuten, W.
Author_Institution :
Fac. of Electr. Eng., Eindhoven Univ. of Technol., Netherlands
fDate :
9/11/1997 12:00:00 AM
Abstract :
The small-signal intrinsic impedance of GaAs/AlAs based resonant tunnelling diodes with thin barriers has been measured at room temperature over the full 0-2 V bias-voltage and 0.05-40.05 GHz frequency ranges, on stable, non-oscillating devices. The classical Esaki and the quantum-inductance equivalent circuits were used to model the impedance for CAD purposes. Information about the quasibound-state lifetime against bias-voltage was extracted
Keywords :
III-V semiconductors; aluminium compounds; electric impedance; equivalent circuits; gallium arsenide; millimetre wave diodes; resonant tunnelling diodes; semiconductor device models; 0 to 2 V; 0.05 to 40.05 GHz; CAD; Esaki equivalent circuits; GaAs-AlAs; GaAs/AlAs based RTD; bias-voltage; equivalent-network modelling; impedance modelling; quantum-inductance equivalent circuits; quasibound-state lifetime; resonant tunnelling diodes; thin barriers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19971107
