Title :
AlGaAs/GaAs npn heterojunction bipolar transistors grown by molecular beam epitaxy on Si (311)
Author :
Jurkovic, M.J. ; Alperin, J. ; Du, Q. ; Wang, W.I. ; Chang, M.F.
Author_Institution :
Dept. of Electr. Eng., Columbia Univ., New York, NY, USA
fDate :
9/11/1997 12:00:00 AM
Abstract :
AlGaAs/GaAs npn heterojunction bipolar transistors grown by molecular beam epitaxy on Si (311) substrates and fabricated using a self-aligned base contact process are reported. Reflection high energy electron diffraction patterns correlate with antiphase domain-free growth. Preliminary DC measurements for 70×70 μm2 device reveal a small-signal common-emitter current gain of 10 and a collector-emitter breakdown voltage of 13 V
Keywords :
III-V semiconductors; aluminium compounds; electric breakdown; gallium arsenide; heterojunction bipolar transistors; molecular beam epitaxial growth; reflection high energy electron diffraction; semiconductor growth; 13 V; AlGaAs-GaAs; MBE growth; RHEED patterns; Si; Si (311) substrates; antiphase domain-free growth; collector-emitter breakdown voltage; heterojunction bipolar transistors; molecular beam epitaxy; n-p-n HBTs; self-aligned base contact process;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19971113
