• DocumentCode
    1281312
  • Title

    Detailed calculation of vertical electric field in thin oxide MOSFETs

  • Author

    Gennai, S. ; Iannaccone, G.

  • Author_Institution
    Pisa Univ., Italy
  • Volume
    35
  • Issue
    21
  • fYear
    1999
  • fDate
    10/14/1999 12:00:00 AM
  • Firstpage
    1881
  • Lastpage
    1883
  • Abstract
    The authors have performed a detailed calculation of the vertical electric field in a MOSFET, taking into account polysilicon gate depletion, quantum-confinement effects in the channel, and the anisotropy of the effective mass. It is shown that thin oxides do not exhibit higher actual breakdown fields than thick oxides
  • Keywords
    MOSFET; dielectric thin films; effective mass; electric fields; semiconductor device breakdown; Si-SiO2; breakdown fields; channel quantum-confinement effects; effective mass anisotropy; polysilicon gate depletion; thin gate oxide; thin oxide MOSFETs; vertical electric field;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19991253
  • Filename
    810040
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1281312