Title :
Logic circuit elements using single-electron tunnelling transistors
Author :
Stone, N.J. ; Ahmed, H.
Author_Institution :
Cavendish Lab., Cambridge Univ., UK
fDate :
10/14/1999 12:00:00 AM
Abstract :
Logic elements have been demonstrated using single-electron tunnelling transistors. The transistors are biased at different positions in the conductance oscillation cycle so that they are analogous to either n-type or p-type transistors. The circuit operation is stable at a temperature of 1.6 K despite the low gain of the transistors
Keywords :
NAND circuits; circuit stability; integrated logic circuits; logic gates; single electron transistors; 1.6 K; biasing; conductance oscillation cycle; logic circuit elements; single-electron tunnelling transistors; stable circuit operation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19991231
