Electron mobility measurement in short-channel FET´s using the cutoff frequency method

Author

Sun, C.C. ; Xu, J.M. ; Hagley, A. ; Surridge, R. ; Thorpe, A. Spring

Author_Institution

Dept. of Electr. Eng., Toronto Univ., Ont., Canada

Volume

11

Issue

9

fYear

1990

Firstpage

382

Lastpage

384

Abstract

The cutoff frequency (FT) method is presented to measure electron mobility in short-channel field-effect transistors (FETs). This technique was used to study the electron mobilities in AlGaAs-GaAs self-aligned heterostructure insulated-gate field-effect transistors (HIGFETs), with both undoped and doped channels (E and D mode). The structures were molecular-beam-epitaxy (MBE) grown on

Keywords

III-V semiconductors; aluminium compounds; carrier mobility; gallium arsenide; insulated gate field effect transistors; molecular beam epitaxial growth; AlGaAs-GaAs; D-mode; E mode; GaAs:Si; HIGFETs; MBE; cutoff frequency method; depletion mode; doped channels; electron mobility measurement; enhancement mode; heterostructure insulated-gate field-effect transistors; molecular-beam-epitaxy; selective implantation; self aligned FETs; semi-insulating GaAs substrates; semiconductors; short channel FETs; short-channel field-effect transistors; Current measurement; Cutoff frequency; Electrical resistance measurement; Electron mobility; FETs; Frequency measurement; Giant magnetoresistance; Length measurement; Magnetic field measurement; Parasitic capacitance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.62963

Filename

62963