Title :
Method to measure MOSFET inversion layer mobility
Author :
Wang, Jinyan ; Tan, Changhua ; Xu, Mingzhen
Author_Institution :
Inst. of Microelectron., Beijing Univ., China
fDate :
10/14/1999 12:00:00 AM
Abstract :
Accurate channel mobility is obtained with a new method at different drain and substrate biases. This method allows the channel mobility and electric field to be obtained over a wide range of voltages (VDS=0.02-1 V). The plot of mobility against electric field shows a universal curve that is independent of the drain and substrate bias
Keywords :
MOSFET; carrier mobility; inversion layers; semiconductor device measurement; MOSFET inversion layer mobility; channel mobility measurement; drain bias; electric field; substrate bias;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19991157
