• DocumentCode
    1281326
  • Title

    Method to measure MOSFET inversion layer mobility

  • Author

    Wang, Jinyan ; Tan, Changhua ; Xu, Mingzhen

  • Author_Institution
    Inst. of Microelectron., Beijing Univ., China
  • Volume
    35
  • Issue
    21
  • fYear
    1999
  • fDate
    10/14/1999 12:00:00 AM
  • Firstpage
    1884
  • Lastpage
    1886
  • Abstract
    Accurate channel mobility is obtained with a new method at different drain and substrate biases. This method allows the channel mobility and electric field to be obtained over a wide range of voltages (VDS=0.02-1 V). The plot of mobility against electric field shows a universal curve that is independent of the drain and substrate bias
  • Keywords
    MOSFET; carrier mobility; inversion layers; semiconductor device measurement; MOSFET inversion layer mobility; channel mobility measurement; drain bias; electric field; substrate bias;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19991157
  • Filename
    810042
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1281326