DocumentCode
1281343
Title
The toughest transistor yet [GaN transistors]
Author
Eastman, Lester F. ; Mishra, Umesh K.
Author_Institution
Cornell Univ., Ithaca, NY, USA
Volume
39
Issue
5
fYear
2002
fDate
5/1/2002 12:00:00 AM
Firstpage
28
Lastpage
33
Abstract
GaN transistors withstand extreme heat and are capable of handling frequencies and power levels well beyond those possible with silicon, gallium arsenide, silicon carbide, or essentially any other semiconductor yet fabricated. Frequency and power-handling capabilities of this caliber could make all the difference in amplifiers, modulators, and other key components of the advanced communications networks. GaN transistors could double or triple the efficiency of base-station amplifiers, so that a given area could be covered by fewer base stations or, more likely, be flooded with more data at much higher rates. These same characteristics of speed, high-power handling, and heat resistance would also suit the transistors for many other uses
Keywords
III-V semiconductors; cellular radio; electron mobility; gallium compounds; microwave field effect transistors; power field effect transistors; semiconductor device breakdown; thermal resistance; wide band gap semiconductors; GaN; GaN transistors; advanced communications networks; broadband wireless networks; cellular base-station amplifiers; electron mobility; field-effect transistor; heat resistance; high breakdown field; high frequency handling; high speed; high-frequency characteristics; high-power handling; hybrid electric vehicles; Gallium nitride; III-V semiconductor materials; Laboratories; Laser radar; Light emitting diodes; National electric code; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Semiconductor optical amplifiers;
fLanguage
English
Journal_Title
Spectrum, IEEE
Publisher
ieee
ISSN
0018-9235
Type
jour
DOI
10.1109/6.999791
Filename
999791
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