• DocumentCode
    1281456
  • Title

    Decoupling and suppression of MOSFET distortion components

  • Author

    Shoucair, F.S.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
  • Volume
    33
  • Issue
    18
  • fYear
    1997
  • fDate
    8/28/1997 12:00:00 AM
  • Firstpage
    1544
  • Lastpage
    1545
  • Abstract
    If a nonsaturated long-channel MOSFET is driven by linear and parabolic gate signals (α1VD2 VD2) derived from the drain signal VD , the drain current´s odd and even distortion components are decoupled and can be independently nulled by separately setting the constants α1 and α2 under normal bias conditions. The authors present a model which accurately predicts measurements for single-ended and balanced circuit configurations down to at least 80 dB below the amplitude of the fundamental
  • Keywords
    MOSFET; electric distortion; semiconductor device models; MOSFET distortion components; balanced circuit configurations; distortion components; drain signal; independent nulling; nonsaturated long-channel MOSFET; normal bias conditions; parabolic gate signals; single-ended circuit configurations;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19971034
  • Filename
    629648