DocumentCode :
1281456
Title :
Decoupling and suppression of MOSFET distortion components
Author :
Shoucair, F.S.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Volume :
33
Issue :
18
fYear :
1997
fDate :
8/28/1997 12:00:00 AM
Firstpage :
1544
Lastpage :
1545
Abstract :
If a nonsaturated long-channel MOSFET is driven by linear and parabolic gate signals (α1VD2 VD2) derived from the drain signal VD , the drain current´s odd and even distortion components are decoupled and can be independently nulled by separately setting the constants α1 and α2 under normal bias conditions. The authors present a model which accurately predicts measurements for single-ended and balanced circuit configurations down to at least 80 dB below the amplitude of the fundamental
Keywords :
MOSFET; electric distortion; semiconductor device models; MOSFET distortion components; balanced circuit configurations; distortion components; drain signal; independent nulling; nonsaturated long-channel MOSFET; normal bias conditions; parabolic gate signals; single-ended circuit configurations;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19971034
Filename :
629648
Link To Document :
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