DocumentCode
1281456
Title
Decoupling and suppression of MOSFET distortion components
Author
Shoucair, F.S.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Volume
33
Issue
18
fYear
1997
fDate
8/28/1997 12:00:00 AM
Firstpage
1544
Lastpage
1545
Abstract
If a nonsaturated long-channel MOSFET is driven by linear and parabolic gate signals (α1VD+α2 VD2) derived from the drain signal VD , the drain current´s odd and even distortion components are decoupled and can be independently nulled by separately setting the constants α1 and α2 under normal bias conditions. The authors present a model which accurately predicts measurements for single-ended and balanced circuit configurations down to at least 80 dB below the amplitude of the fundamental
Keywords
MOSFET; electric distortion; semiconductor device models; MOSFET distortion components; balanced circuit configurations; distortion components; drain signal; independent nulling; nonsaturated long-channel MOSFET; normal bias conditions; parabolic gate signals; single-ended circuit configurations;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19971034
Filename
629648
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