• DocumentCode
    1281486
  • Title

    AlInGaAs/AlGaAs strained-layer 850 nm vertical-cavity lasers with very low thresholds

  • Author

    Ko, J. ; Hegblom, E.R. ; Akulova, Y. ; Margalit, N.M. ; Coldren, L.A.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
  • Volume
    33
  • Issue
    18
  • fYear
    1997
  • fDate
    8/28/1997 12:00:00 AM
  • Firstpage
    1550
  • Lastpage
    1551
  • Abstract
    The authors report a low CW, RT threshold current (Ith) of 156-μA from a 2.8 μm diameter vertical-cavity laser (VCL) with three AlInGaAs quantum wells. Devices show no degradation after 30 h of burn-in testing at a constant current density of 22 kA/cm2 and a junction temperature of 140°C. In addition, devices were measured at various stage temperatures and it was found that the lowest Ith, 110 μA for the 2.8 μm diameter VCL, occurs near 230 K, where the quantum well gain peak and the cavity mode are aligned
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser cavity resonators; laser transitions; quantum well lasers; surface emitting lasers; 110 to 156 muA; 140 C; 2.8 micron; 230 K; 850 nm; AlInGaAs quantum wells; AlInGaAs-AlGaAs; VCSEL; burn-in testing; low thresholds; semiconductor lasers; strained-layer vertical-cavity lasers; vertical cavity SEL;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19971037
  • Filename
    629652
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1281486