Title :
A SPICE Compact Model of Metal Oxide Resistive Switching Memory With Variations
Author :
Guan, Ximeng ; Yu, Shimeng ; Wong, H. -S Philip
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
Abstract :
A SPICE compact model is developed for metal-oxide-based resistive random access memory (RRAM). The model includes the critical impact of temperature change and temporal variation. Using experimental data from HfOx-based RRAM, the model reproduces both the voltage-time relationship and the cycle-to-cycle variation in the RESET of the memory cells.
Keywords :
MOS memory circuits; SPICE; hafnium compounds; random-access storage; RESET; RRAM; SPICE compact model; cycle-to-cycle variation; memory cells; metal oxide resistive switching memory; metal-oxide-based resistive random access memory; temperature change; temporal variation; voltage-time relationship; Hafnium compounds; Heating; Integrated circuit modeling; Mathematical model; Resistance; SPICE; Switches; Compact model; resistive random access memory (RRAM) conducting filament; resistive switching; temperature; variation;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2210856
