Characteristics of Ultrashallow Hetero Indium–Gallium–Zinc–Oxide/Germanium Junction

Author

Shin, Juhyeon ; Shim, Jaewoo ; Lee, Jongtaek ; Choi, Seung-Ha ; Jung, Woo-Shik ; Yu, Hyun-Yong ; Roh, Yonghan ; Park, Jin-Hong

Author_Institution

Sch. of Electron. & Electr. Eng., Sungkyunkwan Univ., Suwon, South Korea

Volume

33

Issue

10

fYear

2012

Firstpage

1363

Lastpage

1365

Abstract

In this letter, we demonstrate an n-indium-gallium-zinc-oxide (IGZO)/i-germanium (Ge) heterojunction diode with an ultrashallow junction depth of ~ 37 nm. X-ray diffraction, atomic force microscopy, and secondary ion mass spectrometry analyses are performed to precisely investigate the n-IGZO and n-IGZO/i-Ge junctions. When the junction diodes are annealed at between 400 °C and 600 °C, a very high on-current density (180-320 A/cm²), which is comparable to that of a Ti/i-Ge reference junction, is obtained. In particular, after the 600 °C anneal, a fairly high on/ off-current ratio (7×10²) is also observed.

Keywords

II-VI semiconductors; X-ray diffraction; annealing; gallium compounds; germanium; indium compounds; semiconductor diodes; wide band gap semiconductors; zinc compounds; InGaZnO-Ge; X-ray diffraction; annealing; atomic force microscopy; heterojunction diode; on-current density; reference junction; secondary ion mass spectrometry analyses; temperature 400 degC to 600 degC; ultrashallow hetero indium-gallium-zinc-oxide/germanium junction; ultrashallow junction depth; Annealing; Atomic measurements; Germanium; Heterojunctions; P-i-n diodes; X-ray scattering; Germanium (Ge); heterojunction; indium–gallium–zinc–oxide (IGZO);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2210992

Filename

6296680