DocumentCode :
1281781
Title :
Low-Frequency Noise Assessment of the Oxide Quality of Gate-Last High- 
pMOSFETs
Author :
Simoen, E. ; Veloso, A. ; Horiguchi, N. ; Claeys, C.
Author_Institution :
IMEC, Leuven, Belgium
Volume :
33
Issue :
10
fYear :
2012
Firstpage :
1366
Lastpage :
1368
Abstract :
The impact of wet versus dry dummy dielectric removal approaches on replacement metal gate (RMG) high- k last (RMG-HKL) pMOSFETs, with aggressively scaled high- k gate dielectric, has been studied by low-frequency noise. It is shown that excess generation-recombination noise, ascribed to random telegraph noise, causes a significant variability in the power spectral density (PSD). The best average PSD and the smallest device-to-device spread have been obtained by the remote-plasma dummy-gate removal followed by an in situ HF exposure prior to atomic layer deposition of HfO2.
Keywords :
MOSFET; high-k dielectric thin films; PSD; RMG-HKL pMOSFET; atomic layer deposition; dry dummy dielectric removal approaches; generation-recombination noise; in situ HF exposure; low-frequency noise; low-frequency noise assessment; oxide quality; power spectral density; random telegraph noise; remote-plasma dummy-gate removal; replacement metal gate high-k last pMOSFET; Dielectrics; Hafnium compounds; Logic gates; Low-frequency noise; MOSFETs; Silicon; Gate-last; generation–recombination (GR) noise; low frequency (LF) noise; replacement metal gate (RMG);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2012.2210993
Filename :
6296681
Link To Document :
