• DocumentCode
    1281781
  • Title

    Low-Frequency Noise Assessment of the Oxide Quality of Gate-Last High- k pMOSFETs

  • Author

    Simoen, E. ; Veloso, A. ; Horiguchi, N. ; Claeys, C.

  • Author_Institution
    IMEC, Leuven, Belgium
  • Volume
    33
  • Issue
    10
  • fYear
    2012
  • Firstpage
    1366
  • Lastpage
    1368
  • Abstract
    The impact of wet versus dry dummy dielectric removal approaches on replacement metal gate (RMG) high- k last (RMG-HKL) pMOSFETs, with aggressively scaled high- k gate dielectric, has been studied by low-frequency noise. It is shown that excess generation-recombination noise, ascribed to random telegraph noise, causes a significant variability in the power spectral density (PSD). The best average PSD and the smallest device-to-device spread have been obtained by the remote-plasma dummy-gate removal followed by an in situ HF exposure prior to atomic layer deposition of HfO2.
  • Keywords
    MOSFET; high-k dielectric thin films; PSD; RMG-HKL pMOSFET; atomic layer deposition; dry dummy dielectric removal approaches; generation-recombination noise; in situ HF exposure; low-frequency noise; low-frequency noise assessment; oxide quality; power spectral density; random telegraph noise; remote-plasma dummy-gate removal; replacement metal gate high-k last pMOSFET; Dielectrics; Hafnium compounds; Logic gates; Low-frequency noise; MOSFETs; Silicon; Gate-last; generation–recombination (GR) noise; low frequency (LF) noise; replacement metal gate (RMG);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2012.2210993
  • Filename
    6296681
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1281781