A Self-Rectifying $\\hbox {AlO}_{y}$ Bipolar RRAM With Sub-50- $\\mu\\hbox {A}$ Set/Reset Curren

Author

Tran, X.A. ; Zhu, W. ; Liu, W.J. ; Yeo, Y.C. ; Nguyen, B.Y. ; Yu, Hong Yu

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore

Volume

33

Issue

10

fYear

2012

Firstpage

1402

Lastpage

1404

Abstract

In this letter, a bipolar resistive switching RAM based on Ni/AlOy/n⁺-Si which exhibits high potential to realize transistor-free operation for cross-bar array is successfully demonstrated. The proposed device shows well-behaved bipolar memory performance with self-rectifying behavior in low-resistance state (>; 700 at 0.2 V), a high on/off resistance ratio (>;10³), a good retention characteristic (>; 10⁴ s at 100 ^°C ), and a wide readout margin for cross-bar architecture (number of word line N >; 2⁵ for worst case condition).

Keywords

aluminium compounds; elemental semiconductors; nickel; random-access storage; silicon; Ni-AlO-Si; bipolar resistive switching random access memory; cross-bar architecture; cross-bar array; current 50 muA; high on-off resistance ratio; readout margin; retention characteristic; self-rectifying bipolar RRAM; subset-reset current; temperature 100 degC; transistor-free operation; voltage 0.2 V; worst case condition; Arrays; Electron devices; Nickel; Resistance; Silicon; Switches; Bipolar; resistive random access memory (RRAM); resistive switching (RS); self-rectifying;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2210855

Filename

6296683

A Self-Rectifying Bipolar RRAM With Sub-50- Set/Reset Curren

Tran, X.A. ; Zhu, W. ; Liu, W.J. ; Yeo, Y.C. ; Nguyen, B.Y. ; Yu, Hong Yu

jour

A Self-Rectifying $\\hbox {AlO}_{y}$ Bipolar RRAM With Sub-50- $\\mu\\hbox {A}$ Set/Reset Curren