Highly lattice-mismatched In/sub 0.26/Ga/sub 0.74/As/GaAs MESFET´s: impact of critical thickness on device performance

Author

Wang, Guan-Wu ; Kaliski, R. ; Kuang, J.B.

Author_Institution

Ford Microelectron. Inc., Colorado Springs, CO, USA

Volume

11

Issue

9

fYear

1990

Firstpage

394

Lastpage

396

Abstract

Fabrication of 0.25- mu m-gate MESFETs directly on In/sub 0.26/Ga/sub 0.74/As epitaxial layers which are much thicker than the pseudomorphic critical thickness is described. The InAs mole fraction is increased in the MESFET channel to 26%. Whether the device performance can be further improved without detrimental dislocation effects as the channel thickness exceeds the critical thickness considerably is investigated. Despite large lattice mismatch and high defect density, these devices show excellent microwave performance with an extrinsic f/sub t/ of 120 GHz. Bias-dependent S-parameters indicate that the In/sub 0.26/Ga/sub 0.74/As MESFET maintains excellent device performance down to very low drain current without showing any performance degradation due to misfit or threading dislocations.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; indium compounds; semiconductor epitaxial layers; solid-state microwave devices; 0.25 micron; 120 GHz; InAs mole fraction; MESFETs; bias dependent S-parameters; device performance; high defect density; impact of critical thickness; large lattice mismatch; low drain current; microwave performance; pseudomorphic critical thickness; semiconductors; submicron gate; threading dislocations; Capacitive sensors; Current density; Fabrication; Gallium arsenide; Indium gallium arsenide; MESFETs; MOCVD; Microwave devices; Scattering parameters; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.62967

Filename

62967