DocumentCode
1281892
Title
20 Gbit/s monolithic photoreceiver consisting of a waveguide pin photodiode and HEMT distributed amplifier
Author
Takahata, K. ; Muramoto, Y. ; Fukano, H. ; Kato, K. ; Kozen, A. ; Nakajima, O. ; Kimura, S. ; Imai, Y.
Author_Institution
NTT Opto-Electron. Labs., Kanagawa, Japan
Volume
33
Issue
18
fYear
1997
fDate
8/28/1997 12:00:00 AM
Firstpage
1576
Lastpage
1577
Abstract
A monolithic photoreceiver OEIC for λ=1.55 μm consisting of a waveguide pin photodiode and an InAlAs/InGaAs HEMT distributed amplifier has been fabricated using a single-step MOVPE growth technique. It has a 3 dB-down frequency of 20 GHz and operates at 20 Gbit/s with a sensitivity of -10.4 dBm
Keywords
p-i-n photodiodes; 1.55 micrometre; 20 Gbit/s; 3 dB-down frequency; HEMT distributed amplifier; III-V semiconductors; InAlAs-InGaAs; photoreceiver OEIC; sensitivity; single-step MOVPE growth technique; waveguide pin photodiode;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19971015
Filename
629671
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