DocumentCode :
1281902
Title :
Thick SiO2 layer produced by anodisation
Author :
Haiyan, Ou ; Qinqing, Yang ; Hongbing, Lei ; Hongjie, Wang ; Qiming, Wang ; Xiongwei, Hu
Author_Institution :
Inst. of Semicond., Acad. Sinica, Beijing, China
Volume :
35
Issue :
22
fYear :
1999
fDate :
10/28/1999 12:00:00 AM
Firstpage :
1950
Lastpage :
1951
Abstract :
A method for oxidising porous silicon to obtain thick SiO2 as the cladding layer of silicon-based silica waveguides is presented. The experimental results of oxidation are given. The following conclusions are drawn: the oxidation rate of porous silicon is several orders higher than that of bulk silicon, the appropriate temperature variation rate during oxidation combined with proper porosity can prevent SiO2 on silicon substrates from cracking, and a 25 μm thick silicon dioxide layer has been obtained
Keywords :
anodisation; elemental semiconductors; integrated optics; oxidation; porous semiconductors; silicon; silicon compounds; 25 micron; SiO2-Si; anodisation; cladding layer; cracking; integrated waveguide devices; oxidation rate; porous material; temperature variation rate;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19991277
Filename :
811072
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1281902
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