Low-power 100 GHz shunt-peaked regenerative frequency divider using 0.18 μm SiGe BiCMOS

Author

Chen, A.Y.-K. ; Baeyens, Y. ; Chen, Yen-Kuang ; Lin, James

Volume

47

Issue

14

fYear

2011

Firstpage

804

Lastpage

805

Abstract

A report is presented on the performance of a low-power 100 GHz high-speed shuntpeaked regenerative frequency divider (RFD) fabricated in a low-cost 200/180 GHz f_T/f_max 0.18 μm SiGe BiCMOS technology. A bandwidth enhancement technique based on inductive peaking is employed to improve further the high frequency performance of the RFD with low power consumption. Design measures including the loop dynamics and selection of the shunt-peaked inductor are discussed. The RFD operates with a wide operation bandwidth from 20 GHz to at least 100 GHz with excellent input sensitivity while consuming a total DC power of only 198 mW from a nominal 3.3 V supply. The compact chip area including the pads is 0.6 × 0.4 mm².

Keywords

BiCMOS integrated circuits; Ge-Si alloys; frequency dividers; low-power electronics; millimetre wave integrated circuits; BiCMOS technology; SiGe; bandwidth enhancement technique; frequency 100 GHz; frequency 180 GHz; frequency 200 GHz; inductive peaking; loop dynamics; loop selection; low power consumption; low-power high-speed shunt-peaked regenerative frequency divider; power 198 mW; size 0.18 mum; voltage 3.3 V;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2011.1454

Filename

5961272