Title :
Thin-film wafer fusion fabrication technology for buried heterostructure InGaAsP/lnP lasers on GaAs
Author :
Ohiso, Y. ; Iga, R. ; Kishi, K. ; Amano, C.
Author_Institution :
NTT Photonics Labs., Kanagawa, Japan
fDate :
10/28/1999 12:00:00 AM
Abstract :
A new fabrication technology is proposed in which thin-film wafer fusion is used to develop high-performance optoelectronic devices on a lattice-mismatched substrate. By using this technology, buried-heterostructure InP-based lasers on GaAs substrate have been realised for the first time. A continuous-wave threshold current of 10.6 mA has been realised with a stable fundamental transverse mode
Keywords :
semiconductor lasers; InGaAsP-InP-GaAs; buried heterostructure lasers; continuous-wave threshold current; lattice-mismatched substrate; stable fundamental transverse mode; thin-film wafer fusion fabrication technology;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19991297
