DocumentCode
1281965
Title
Coplanar waveguide transmission lines and high Q inductors on CMOS grade silicon using photoresist and polyimide
Author
Ternent, G. ; Ferguson, S. ; Borsofoldi, Z. ; Elgaid, K. ; Lohdi, T. ; Edgar, D. ; Wilkinson, C.D.W. ; Thayne, I.G.
Author_Institution
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Volume
35
Issue
22
fYear
1999
fDate
10/28/1999 12:00:00 AM
Firstpage
1957
Lastpage
1958
Abstract
Gold coplanar waveguide (CPW) transmission lines with losses of <0.5 dB/mm at 60 GHz have been produced on CMOS grade silicon substrates using a 15 μm thick layer of either photoresist or polyimide. This process, together with an electroplated interconnect technique, has been used to produce spiral inductors on a 2 Ω/cm n-Si substrate with a Q of 15 and L of 1.2 nH at 6 GHz
Keywords
CMOS analogue integrated circuits; coplanar waveguides; electroplating; elemental semiconductors; field effect MMIC; inductors; losses; photoresists; silicon; 15 micron; 6 GHz; 60 GHz; CMOS grade semiconductor; Si; coplanar waveguide transmission lines; electroplated interconnect technique; high Q inductors; losses; photoresist; polyimide; spiral inductors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19991298
Filename
811083
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