Title :
Polarisation-insensitive travelling-wave electrode electroabsorption (TW-EA) modulator with bandwidth over 50 GHz and driving voltage less than 2 V
Author :
Kawano, K. ; Kohtoku, M. ; Ueki, M. ; Ito, T. ; Kondoh, S. ; Noguchi, Y. ; Hasumi, Y.
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
fDate :
8/28/1997 12:00:00 AM
Abstract :
The proposed TW-EA modulator has a thin intrinsic layer (a 0.2 μm thick strained InGaAlAs (13 nm)/InAlAs (5 nm) MQW) and short interaction length (200 μm). The optical 3 dB modulation bandwidth exceeds 50 GHz, and the driving voltages for the 15 dB extinction ratio are 1.7 and 1.9 V for TE and TM modes respectively, at 1.55 μm wavelength
Keywords :
electro-optical modulation; electroabsorption; optical communication equipment; semiconductor quantum wells; 1.55 micron; 1.7 V; 1.9 V; 50 GHz; InGaAlAs-InAlAs; TE mode; TM mode; electroabsorption modulator; optical modulation bandwidth; polarisation-insensitive modulator; short interaction length; strained InGaAlAs/InAlAs MQW; thin intrinsic layer; travelling-wave electrode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19971036
