Title :
Negative backside thermoreflectance modulation of microscale metal interconnects
Author :
Teo, J.K.J. ; Chua, C.M. ; Koh, L.S. ; Phang, J.C.H.
Author_Institution :
Centre for Integrated Circuit Failure Anal. & Reliability (CICFAR), Nat. Univ. of Singapore, Singapore, Singapore
Abstract :
The variation of backside reflectance modulation effects on metal line samples at different electrical bias and silicon backside thicknesses is investigated. Negative reflected intensity modulations are observed and are one to two orders of magnitude larger than the values from published results. It was found that the negative reflected intensity modulation with electrical bias depends on the temperature variation of the absorption coefficient while observed positive reflectance intensity modulation is due to temperature variation of the reflectance.
Keywords :
absorption coefficients; elemental semiconductors; integrated optoelectronics; monolithic integrated circuits; silicon; thermoreflectance; Si; absorption coefficient; backside thermoreflectance modulation; electrical bias; metal line; microscale metal interconnects; negative reflected intensity modulations; silicon backside thickness; temperature variation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2011.0302
