Title :
Stress-voiding of narrow conductor lines
Author :
Yost, F.G. ; Campbell, F.E.
Author_Institution :
Sandia Nat. Lab., Albuquerque, NM, USA
fDate :
5/1/1990 12:00:00 AM
Abstract :
The growth of voids in conductor lines that have no applied voltage nor imposed thermal or concentration gradients is examined. Such voids can cause narrow aluminium conductors in silicon ICs to fail spontaneously. Recent attempts to describe void growth mathematically as a stress-driven diffusive phenomenon are reviewed, and an expression for the time dependent void size is derived. The equation is used to explore the many variables of the void-growth problem.<>
Keywords :
aluminium; circuit reliability; failure analysis; grain boundary diffusion; integrated circuit technology; metallisation; Al conductor failure; ICs; Monte Carlo analysis; Si integrated circuits; failure model; grain boundaries; narrow conductor lines; stress voiding; stress-driven diffusive phenomenon; time dependent void size; void growth; Aluminum; Capacitive sensors; Chemicals; Circuit testing; Conductors; Passivation; Silicon; Temperature; Tensile stress; Thermal stresses;
Journal_Title :
Circuits and Devices Magazine, IEEE
