DocumentCode
1282025
Title
Stress-voiding of narrow conductor lines
Author
Yost, F.G. ; Campbell, F.E.
Author_Institution
Sandia Nat. Lab., Albuquerque, NM, USA
Volume
6
Issue
3
fYear
1990
fDate
5/1/1990 12:00:00 AM
Firstpage
40
Lastpage
44
Abstract
The growth of voids in conductor lines that have no applied voltage nor imposed thermal or concentration gradients is examined. Such voids can cause narrow aluminium conductors in silicon ICs to fail spontaneously. Recent attempts to describe void growth mathematically as a stress-driven diffusive phenomenon are reviewed, and an expression for the time dependent void size is derived. The equation is used to explore the many variables of the void-growth problem.<>
Keywords
aluminium; circuit reliability; failure analysis; grain boundary diffusion; integrated circuit technology; metallisation; Al conductor failure; ICs; Monte Carlo analysis; Si integrated circuits; failure model; grain boundaries; narrow conductor lines; stress voiding; stress-driven diffusive phenomenon; time dependent void size; void growth; Aluminum; Capacitive sensors; Chemicals; Circuit testing; Conductors; Passivation; Silicon; Temperature; Tensile stress; Thermal stresses;
fLanguage
English
Journal_Title
Circuits and Devices Magazine, IEEE
Publisher
ieee
ISSN
8755-3996
Type
jour
DOI
10.1109/101.55334
Filename
55334
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