DocumentCode
1282045
Title
Enhanced surface emitting waveguides for visible, monolithic semiconductor laser sources
Author
Normandin, R. ; Williams, R.L. ; Chatenoud, F.
Author_Institution
Optoelectron. Devices, Ottawa, Ont., Canada
Volume
26
Issue
25
fYear
1990
Firstpage
2088
Lastpage
2089
Abstract
By using AlGaAs resonant multilayers embedded in a waveguide geometry a ten million fold enhancement for surface emitting harmonic generation over a normal GaAs film was obtained. The multilayer system alloys compensation for material losses at the harmonic and the use of thick films for efficient coupling of communication fibres to the device. The experimental results agree closely with theory and a monolithic implementation of visible, surface emitting solid state diode lasers is presented for InGaAs, InP and GaAs geometries.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; optical harmonic generation; optical waveguides; semiconductor junction lasers; AlGaAs resonant multilayers; GaAs; InGaAs; InP; compensation for material losses; coupling of communication fibres; experimental results; semiconductors; surface emitting harmonic generation; surface emitting lasers; surface emitting solid state diode lasers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19901345
Filename
59613
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