• DocumentCode
    1282045
  • Title

    Enhanced surface emitting waveguides for visible, monolithic semiconductor laser sources

  • Author

    Normandin, R. ; Williams, R.L. ; Chatenoud, F.

  • Author_Institution
    Optoelectron. Devices, Ottawa, Ont., Canada
  • Volume
    26
  • Issue
    25
  • fYear
    1990
  • Firstpage
    2088
  • Lastpage
    2089
  • Abstract
    By using AlGaAs resonant multilayers embedded in a waveguide geometry a ten million fold enhancement for surface emitting harmonic generation over a normal GaAs film was obtained. The multilayer system alloys compensation for material losses at the harmonic and the use of thick films for efficient coupling of communication fibres to the device. The experimental results agree closely with theory and a monolithic implementation of visible, surface emitting solid state diode lasers is presented for InGaAs, InP and GaAs geometries.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; optical harmonic generation; optical waveguides; semiconductor junction lasers; AlGaAs resonant multilayers; GaAs; InGaAs; InP; compensation for material losses; coupling of communication fibres; experimental results; semiconductors; surface emitting harmonic generation; surface emitting lasers; surface emitting solid state diode lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19901345
  • Filename
    59613